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MSW20N60 MOSFET Transistor

The MSW20N60 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the MSW20N60 transistor as follows.

Circuit diagram symbol of the MSW20N60 transistor

MSW20N60 Transistor Specification

Transistor Code MSW20N60
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-3P_TO-247
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 20A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.32Ohm
Power Dissipation (Maximum) PD 320W
Drain-Source Capacitance 410pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 200nS
Gate-Threshold Voltage (Maximum) 4V

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