AFN07N65T220T MOSFET Transistor

The AFN07N65T220T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN07N65T220T transistor as follows.

AFN07N65T220T Transistor Specification

Transistor Code		AFN07N65T220T
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	145W
Drain-Source Capacitance		98.6pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		48nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		15.5nC

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