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IXFV110N25T MOSFET Transistor

The IXFV110N25T is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFV110N25T transistor as follows.

Circuit diagram symbol of the IXFV110N25T transistor

IXFV110N25T Transistor Specification

Transistor Code IXFV110N25T
Transistor Type MOSFET
Control Channel Type N-Channel
Package PLUS220
Drain-Source Voltage (Maximum) VDS 250V
Drain Current (Maximum) ID 110A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.024Ohm
Power Dissipation (Maximum) PD 694W
Total Gate Charge 157nC

IXFV110N25T MOSFET Transistor Overview

The IXFV110N25T is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a PLUS220 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXFV110N25T MOSFET

Followings are the key electrical characteristics of the IXFV110N25T MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXFV110N25T MOSFET transistor is 250V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXFV110N25T MOSFET transistor is 110A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXFV110N25T MOSFET transistor when the transistor is fully turned on is 0.024 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXFV110N25T MOSFET transistor can comfortably transfer into heat without breaking is 694W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXFV110N25T MOSFET transistor is switched on is . This is the rate at which IXFV110N25T MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the IXFV110N25T MOSFET transistor. You can download the official IXFV110N25T MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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