IXFV10N100P MOSFET Transistor

The IXFV10N100P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFV10N100P transistor as follows.

IXFV10N100P Transistor Specification

Transistor Code		IXFV10N100P
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PLUS220
Drain-Source Voltage (Maximum)	VDS	1000V
Drain Current (Maximum)	ID	10A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.4Ohm
Power Dissipation (Maximum)	PD	380W
Rise Time		300nS
Total Gate Charge		58nC

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