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IXFK150N30P3 MOSFET Transistor

The IXFK150N30P3 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IXFK150N30P3 transistor as follows.

Circuit diagram symbol of the IXFK150N30P3 transistor

IXFK150N30P3 Transistor Specification

Transistor Code IXFK150N30P3
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-264
Drain-Source Voltage (Maximum) VDS 300V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 150A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.019Ohm
Power Dissipation (Maximum) PD 1300W
Drain-Source Capacitance 1910pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 30nS
Gate-Threshold Voltage (Maximum) 5V
Total Gate Charge 197nC

IXFK150N30P3 MOSFET Transistor Overview

The IXFK150N30P3 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-264 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the IXFK150N30P3 MOSFET

Followings are the key electrical characteristics of the IXFK150N30P3 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IXFK150N30P3 MOSFET transistor is 300V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the IXFK150N30P3 MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IXFK150N30P3 MOSFET transistor is 150A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IXFK150N30P3 MOSFET transistor when the transistor is fully turned on is 0.019 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IXFK150N30P3 MOSFET transistor can comfortably transfer into heat without breaking is 1300W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the IXFK150N30P3 MOSFET transistor is 1910pF. This value influences to the switching speed of the IXFK150N30P3 MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IXFK150N30P3 MOSFET transistor is switched on is 30nS. This is the rate at which IXFK150N30P3 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IXFK150N30P3 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IXFK150N30P3 MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IXFK150N30P3 MOSFET transistor. You can download the official IXFK150N30P3 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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