FQL50N40 MOSFET Transistor

The FQL50N40 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FQL50N40 transistor as follows.

FQL50N40 Transistor Specification

Transistor Code		FQL50N40
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-264
Drain-Source Voltage (Maximum)	VDS	400V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	50A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.075Ohm
Power Dissipation (Maximum)	PD	460W
Drain-Source Capacitance		1000pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		510nS
Gate-Threshold Voltage (Maximum)		5V
Total Gate Charge		160nC

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