IRFM214A MOSFET Transistor

The IRFM214A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM214A transistor as follows.

IRFM214A Transistor Specification

Transistor Code		IRFM214A
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT223
Drain-Source Voltage (Maximum)	VDS	250V
Drain Current (Maximum)	ID	0.64A
Drain-Source On-State Resistance (Maximum)	RDS(on)	2Ohm
Power Dissipation (Maximum)	PD	2.1W
Drain-Source Capacitance		180pF
Operating Junction Temperature (Maximum)		150°C

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