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IRFM214A MOSFET Transistor

The IRFM214A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IRFM214A transistor as follows.

Circuit diagram symbol of the IRFM214A transistor

IRFM214A Transistor Specification

Transistor Code IRFM214A
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 250V
Drain Current (Maximum) ID 0.64A
Drain-Source On-State Resistance (Maximum) RDS(on) 2Ohm
Power Dissipation (Maximum) PD 2.1W
Drain-Source Capacitance 180pF
Operating Junction Temperature (Maximum) 150°C

IRFM214A MOSFET Transistor Overview

The IRFM214A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT223 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the IRFM214A MOSFET

Followings are the key electrical characteristics of the IRFM214A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in IRFM214A MOSFET transistor is 250V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the IRFM214A MOSFET transistor is 0.64A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of IRFM214A MOSFET transistor when the transistor is fully turned on is 2 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the IRFM214A MOSFET transistor can comfortably transfer into heat without breaking is 2.1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the IRFM214A MOSFET transistor is 180pF. This value influences to the switching speed of the IRFM214A MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the IRFM214A MOSFET transistor is switched on is . This is the rate at which IRFM214A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the IRFM214A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of IRFM214A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the IRFM214A MOSFET transistor. You can download the official IRFM214A MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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