IPD35N10S3L-26 MOSFET Transistor

The IPD35N10S3L-26 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD35N10S3L-26 transistor as follows.

IPD35N10S3L-26 Transistor Specification

Transistor Code		IPD35N10S3L-26
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO252
Drain-Source Voltage (Maximum)	VDS	100V
Drain Current (Maximum)	ID	35A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.024Ohm
Power Dissipation (Maximum)	PD	71W
Total Gate Charge		39nC

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