IPD14N06S2-80 MOSFET Transistor

The IPD14N06S2-80 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the IPD14N06S2-80 transistor as follows.

IPD14N06S2-80 Transistor Specification

Transistor Code		IPD14N06S2-80
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		PGTO252
Drain-Source Voltage (Maximum)	VDS	55V
Drain Current (Maximum)	ID	17A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.08Ohm
Power Dissipation (Maximum)	PD	30W

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