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GMM3X180-004X2-SMD MOSFET Transistor

The GMM3X180-004X2-SMD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the GMM3X180-004X2-SMD transistor as follows.

Circuit diagram symbol of the GMM3X180-004X2-SMD transistor

GMM3X180-004X2-SMD Transistor Specification

Transistor Code GMM3X180-004X2-SMD
Transistor Type MOSFET
Control Channel Type N-Channel
Package ISOPLUSDIL
Drain-Source Voltage (Maximum) VDS 40V
Drain Current (Maximum) ID 180A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.0025Ohm
Power Dissipation (Maximum) PD 20W
Rise Time 170nS

GMM3X180-004X2-SMD MOSFET Transistor Overview

The GMM3X180-004X2-SMD is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a ISOPLUSDIL package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the GMM3X180-004X2-SMD MOSFET

Followings are the key electrical characteristics of the GMM3X180-004X2-SMD MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in GMM3X180-004X2-SMD MOSFET transistor is 40V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the GMM3X180-004X2-SMD MOSFET transistor is 180A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of GMM3X180-004X2-SMD MOSFET transistor when the transistor is fully turned on is 0.0025 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the GMM3X180-004X2-SMD MOSFET transistor can comfortably transfer into heat without breaking is 20W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the GMM3X180-004X2-SMD MOSFET transistor is switched on is 170nS. This is the rate at which GMM3X180-004X2-SMD MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the GMM3X180-004X2-SMD MOSFET transistor. You can download the official GMM3X180-004X2-SMD MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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