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GMM3X100-01X1-SMD MOSFET Transistor

The GMM3X100-01X1-SMD is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the GMM3X100-01X1-SMD transistor as follows.

GMM3X100-01X1-SMD Transistor Specification

Transistor Code		GMM3X100-01X1-SMD
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		ISOPLUSDIL
Drain-Source Voltage (Maximum)	V_DS	100V
Drain Current (Maximum)	I_D	90A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.0085Ohm
Power Dissipation (Maximum)	P_D	15W
Rise Time		55nS

GMM3X100-01X1-SMD MOSFET Transistor Overview

The GMM3X100-01X1-SMD is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a ISOPLUSDIL package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the GMM3X100-01X1-SMD MOSFET

Followings are the key electrical characteristics of the GMM3X100-01X1-SMD MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in GMM3X100-01X1-SMD MOSFET transistor is 100V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the GMM3X100-01X1-SMD MOSFET transistor is 90A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of GMM3X100-01X1-SMD MOSFET transistor when the transistor is fully turned on is 0.0085 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the GMM3X100-01X1-SMD MOSFET transistor can comfortably transfer into heat without breaking is 15W. This indicates the amount of power that can safely be dissipated to the device as heat.

Rise Time

The time that the drain current or output voltage increases between low to high when the GMM3X100-01X1-SMD MOSFET transistor is switched on is 55nS. This is the rate at which GMM3X100-01X1-SMD MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the GMM3X100-01X1-SMD MOSFET transistor. You can download the official GMM3X100-01X1-SMD MOSFET transistor datasheet to get more infromation about this transistor.

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