FDY302NZ MOSFET Transistor

The FDY302NZ is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDY302NZ transistor as follows.

FDY302NZ Transistor Specification

Transistor Code		FDY302NZ
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT523F
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.6A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.3Ohm
Power Dissipation (Maximum)	PD	0.625W
Operating Junction Temperature (Maximum)		150°C
Gate-Threshold Voltage (Maximum)		1.5V

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