free stats

Home » Electronics » FET » FDY101PZ Transistor

FDY101PZ MOSFET Transistor

The FDY101PZ is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the FDY101PZ transistor as follows.

Circuit diagram symbol of the FDY101PZ transistor

FDY101PZ Transistor Specification

Transistor Code FDY101PZ
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT523F
Drain-Source Voltage (Maximum) VDS 20V
Gate-Source Voltage (Maximum) VGS 8V
Drain Current (Maximum) ID 0.15A
Drain-Source On-State Resistance (Maximum) RDS(on) 8Ohm
Power Dissipation (Maximum) PD 0.625W
Operating Junction Temperature (Maximum) 150°C
Gate-Threshold Voltage (Maximum) 1.5V

FDY101PZ MOSFET Transistor Overview

The FDY101PZ is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT523F package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the FDY101PZ MOSFET

Followings are the key electrical characteristics of the FDY101PZ MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in FDY101PZ MOSFET transistor is 20V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the FDY101PZ MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the FDY101PZ MOSFET transistor is 0.15A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of FDY101PZ MOSFET transistor when the transistor is fully turned on is 8 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the FDY101PZ MOSFET transistor can comfortably transfer into heat without breaking is 0.625W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the FDY101PZ MOSFET transistor is switched on is . This is the rate at which FDY101PZ MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the FDY101PZ MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of FDY101PZ MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the FDY101PZ MOSFET transistor. You can download the official FDY101PZ MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in P-Channel MOSFET

2N7002T 2N7002T MOSFET Transistor FDY100PZ FDY100PZ MOSFET Transistor FDY102PZ FDY102PZ MOSFET Transistor FDY300NZ FDY300NZ MOSFET Transistor FDY301NZ FDY301NZ MOSFET Transistor FDY302NZ FDY302NZ MOSFET Transistor