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CHM3252ZGP MOSFET Transistor

The CHM3252ZGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM3252ZGP transistor as follows.

Circuit diagram symbol of the CHM3252ZGP transistor

CHM3252ZGP Transistor Specification

Transistor Code CHM3252ZGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-223
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.032Ohm
Power Dissipation (Maximum) PD 3W
Operating Junction Temperature (Maximum) 150°C
Rise Time 4nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 12.5nC

CHM3252ZGP MOSFET Transistor Overview

The CHM3252ZGP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT-223 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the CHM3252ZGP MOSFET

Followings are the key electrical characteristics of the CHM3252ZGP MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in CHM3252ZGP MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the CHM3252ZGP MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the CHM3252ZGP MOSFET transistor is 8A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of CHM3252ZGP MOSFET transistor when the transistor is fully turned on is 0.032 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the CHM3252ZGP MOSFET transistor can comfortably transfer into heat without breaking is 3W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the CHM3252ZGP MOSFET transistor is switched on is 4nS. This is the rate at which CHM3252ZGP MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the CHM3252ZGP MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of CHM3252ZGP MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the CHM3252ZGP MOSFET transistor. You can download the official CHM3252ZGP MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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