BUK127-50GT MOSFET Transistor

The BUK127-50GT is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BUK127-50GT transistor as follows.

BUK127-50GT Transistor Specification

Transistor Code		BUK127-50GT
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-223
Drain-Source Voltage (Maximum)	VDS	50V
Drain Current (Maximum)	ID	2.1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.2Ohm
Power Dissipation (Maximum)	PD	1.8W
Operating Junction Temperature (Maximum)		150°C
Rise Time		0.7nS

BUK127-50GT MOSFET Transistor Overview

The BUK127-50GT is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT-223 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the BUK127-50GT MOSFET

Followings are the key electrical characteristics of the BUK127-50GT MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in BUK127-50GT MOSFET transistor is 50V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the BUK127-50GT MOSFET transistor is 2.1A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of BUK127-50GT MOSFET transistor when the transistor is fully turned on is 0.2 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the BUK127-50GT MOSFET transistor can comfortably transfer into heat without breaking is 1.8W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the BUK127-50GT MOSFET transistor is switched on is 0.7nS. This is the rate at which BUK127-50GT MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the BUK127-50GT MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of BUK127-50GT MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the BUK127-50GT MOSFET transistor. You can download the official BUK127-50GT MOSFET transistor datasheet to get more infromation about this transistor.

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