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CHM2331QGP MOSFET Transistor

The CHM2331QGP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2331QGP transistor as follows.

CHM2331QGP Transistor Specification

Transistor Code		CHM2331QGP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SOT-457
Drain-Source Voltage (Maximum)	V_DS	20V
Gate-Source Voltage (Maximum)	V_GS	8V
Drain Current (Maximum)	I_D	4.2A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.048Ohm
Power Dissipation (Maximum)	P_D	2W
Drain-Source Capacitance		220pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9nS
Gate-Threshold Voltage (Maximum)		0.9V
Total Gate Charge		10nC

CHM2331QGP MOSFET Transistor Overview

The CHM2331QGP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT-457 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the CHM2331QGP MOSFET

Followings are the key electrical characteristics of the CHM2331QGP MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in CHM2331QGP MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the CHM2331QGP MOSFET transistor is 8V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the CHM2331QGP MOSFET transistor is 4.2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of CHM2331QGP MOSFET transistor when the transistor is fully turned on is 0.048 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the CHM2331QGP MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the CHM2331QGP MOSFET transistor is 220pF. This value influences to the switching speed of the CHM2331QGP MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the CHM2331QGP MOSFET transistor is switched on is 9nS. This is the rate at which CHM2331QGP MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the CHM2331QGP MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of CHM2331QGP MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the CHM2331QGP MOSFET transistor. You can download the official CHM2331QGP MOSFET transistor datasheet to get more infromation about this transistor.

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