free stats

Home » Electronics » FET » CHM2316QGP Transistor

CHM2316QGP MOSFET Transistor

The CHM2316QGP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the CHM2316QGP transistor as follows.

Circuit diagram symbol of the CHM2316QGP transistor

CHM2316QGP Transistor Specification

Transistor Code CHM2316QGP
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT-457
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.034Ohm
Power Dissipation (Maximum) PD 2W
Operating Junction Temperature (Maximum) 150°C
Rise Time 3nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 12.3nC

CHM2316QGP MOSFET Transistor Overview

The CHM2316QGP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT-457 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the CHM2316QGP MOSFET

Followings are the key electrical characteristics of the CHM2316QGP MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in CHM2316QGP MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the CHM2316QGP MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the CHM2316QGP MOSFET transistor is 6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of CHM2316QGP MOSFET transistor when the transistor is fully turned on is 0.034 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the CHM2316QGP MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the CHM2316QGP MOSFET transistor is switched on is 3nS. This is the rate at which CHM2316QGP MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the CHM2316QGP MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of CHM2316QGP MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the CHM2316QGP MOSFET transistor. You can download the official CHM2316QGP MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

AM3405P AM3405P MOSFET Transistor CHM2313QGP CHM2313QGP MOSFET Transistor CHM2331QGP CHM2331QGP MOSFET Transistor CHM2703QGP CHM2703QGP MOSFET Transistor CHM3458QGP CHM3458QGP MOSFET Transistor CHM6561QGP CHM6561QGP MOSFET Transistor