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BSC020N025SG MOSFET Transistor

The BSC020N025SG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC020N025SG transistor as follows.

Circuit diagram symbol of the BSC020N025SG transistor

BSC020N025SG Transistor Specification

Transistor Code BSC020N025SG
Transistor Type MOSFET
Control Channel Type N-Channel
Package SUPERSO8
Drain-Source Voltage (Maximum) VDS 25V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.002Ohm
Power Dissipation (Maximum) PD 104W
Total Gate Charge 66nC

BSC020N025SG MOSFET Transistor Overview

The BSC020N025SG is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SUPERSO8 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the BSC020N025SG MOSFET

Followings are the key electrical characteristics of the BSC020N025SG MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BSC020N025SG MOSFET transistor is 25V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BSC020N025SG MOSFET transistor is 100A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BSC020N025SG MOSFET transistor when the transistor is fully turned on is 0.002 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BSC020N025SG MOSFET transistor can comfortably transfer into heat without breaking is 104W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BSC020N025SG MOSFET transistor is switched on is . This is the rate at which BSC020N025SG MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BSC020N025SG MOSFET transistor. You can download the official BSC020N025SG MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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