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BSC010NE2LS MOSFET Transistor

The BSC010NE2LS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the BSC010NE2LS transistor as follows.

Circuit diagram symbol of the BSC010NE2LS transistor

BSC010NE2LS Transistor Specification

Transistor Code BSC010NE2LS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SUPERSO8
Drain-Source Voltage (Maximum) VDS 25V
Drain Current (Maximum) ID 100A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.001Ohm
Power Dissipation (Maximum) PD 96W
Total Gate Charge 64nC

BSC010NE2LS MOSFET Transistor Overview

The BSC010NE2LS is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SUPERSO8 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the BSC010NE2LS MOSFET

Followings are the key electrical characteristics of the BSC010NE2LS MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in BSC010NE2LS MOSFET transistor is 25V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the BSC010NE2LS MOSFET transistor is 100A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of BSC010NE2LS MOSFET transistor when the transistor is fully turned on is 0.001 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the BSC010NE2LS MOSFET transistor can comfortably transfer into heat without breaking is 96W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the BSC010NE2LS MOSFET transistor is switched on is . This is the rate at which BSC010NE2LS MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the BSC010NE2LS MOSFET transistor. You can download the official BSC010NE2LS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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