ALD1101APA MOSFET Transistor

The ALD1101APA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ALD1101APA transistor as follows.

ALD1101APA Transistor Specification

Transistor Code		ALD1101APA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP
Drain-Source Voltage (Maximum)	VDS	12V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	0.05A
Drain-Source On-State Resistance (Maximum)	RDS(on)	75Ohm
Power Dissipation (Maximum)	PD	0.5W
Drain-Source Capacitance		10pF
Operating Junction Temperature (Maximum)		125°C

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