3SK108R MOSFET Transistor

The 3SK108R is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 3SK108R transistor as follows.

3SK108R Transistor Specification

Transistor Code		3SK108R
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DIP
Drain-Source Voltage (Maximum)	VDS	20V
Gate-Source Voltage (Maximum)	VGS	15V
Drain Current (Maximum)	ID	0.03A
Drain-Source On-State Resistance (Maximum)	RDS(on)	200Ohm
Power Dissipation (Maximum)	PD	0.25W
Drain-Source Capacitance		3pF
Operating Junction Temperature (Maximum)		125°C

3SK108R MOSFET Transistor Overview

The 3SK108R is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DIP package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 3SK108R MOSFET

Followings are the key electrical characteristics of the 3SK108R MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 3SK108R MOSFET transistor is 20V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 3SK108R MOSFET transistor is 15V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 3SK108R MOSFET transistor is 0.03A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 3SK108R MOSFET transistor when the transistor is fully turned on is 200 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 3SK108R MOSFET transistor can comfortably transfer into heat without breaking is 0.25W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Drain-Source Capacitance

The capacitance between drain and source of the 3SK108R MOSFET transistor is 3pF. This value influences to the switching speed of the 3SK108R MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 3SK108R MOSFET transistor is switched on is . This is the rate at which 3SK108R MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 3SK108R MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 3SK108R MOSFET transistor can be safely operated at the 125°C without damaging the transistor.

UXPython is not the creator or an official representative of the 3SK108R MOSFET transistor. You can download the official 3SK108R MOSFET transistor datasheet to get more infromation about this transistor.

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