AFN1306 MOSFET Transistor

The AFN1306 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the AFN1306 transistor as follows.

AFN1306 Transistor Specification

Transistor Code		AFN1306
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		SOT-323
Transistor SMD Code		06*
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	12V
Drain Current (Maximum)	ID	1A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.43Ohm
Power Dissipation (Maximum)	PD	0.35W
Drain-Source Capacitance		25pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		25nS
Gate-Threshold Voltage (Maximum)		1V
Total Gate Charge		1.4nC

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