5LP01SP MOSFET Transistor

The 5LP01SP is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 5LP01SP transistor as follows.

5LP01SP Transistor Specification

Transistor Code		5LP01SP
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		SPA
Drain-Source Voltage (Maximum)	VDS	50V
Gate-Source Voltage (Maximum)	VGS	10V
Drain Current (Maximum)	ID	0.07A
Drain-Source On-State Resistance (Maximum)	RDS(on)	23Ohm
Power Dissipation (Maximum)	PD	0.25W
Operating Junction Temperature (Maximum)		150°C

5LP01SP MOSFET Transistor Overview

The 5LP01SP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SPA package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 5LP01SP MOSFET

Followings are the key electrical characteristics of the 5LP01SP MOSFET transistor

• Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in 5LP01SP MOSFET transistor is 50V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

• Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the 5LP01SP MOSFET transistor is 10V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

• Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the 5LP01SP MOSFET transistor is 0.07A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

• Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of 5LP01SP MOSFET transistor when the transistor is fully turned on is 23 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

• Maximum Power Dissipation (P_D)

The maximum power that the 5LP01SP MOSFET transistor can comfortably transfer into heat without breaking is 0.25W. This indicates the amount of power that can safely be dissipated to the device as heat.

• Rise Time

The time that the drain current or output voltage increases between low to high when the 5LP01SP MOSFET transistor is switched on is . This is the rate at which 5LP01SP MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 5LP01SP MOSFET

• Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of 5LP01SP MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 5LP01SP MOSFET transistor. You can download the official 5LP01SP MOSFET transistor datasheet to get more infromation about this transistor.

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