free stats

Home » Electronics » FET » 2SK444 Transistor

2SK444 MOSFET Transistor

The 2SK444 is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 2SK444 transistor as follows.

Circuit diagram symbol of the 2SK444 transistor

2SK444 Transistor Specification

Transistor Code 2SK444
Transistor Type MOSFET
Control Channel Type N-Channel
Package SPA
Drain-Source Voltage (Maximum) VDS 15V
Gate-Source Voltage (Maximum) VGS 2V
Drain Current (Maximum) ID 0.05A
Drain-Source On-State Resistance (Maximum) RDS(on) 50Ohm
Power Dissipation (Maximum) PD 0.2W
Operating Junction Temperature (Maximum) 125°C

2SK444 MOSFET Transistor Overview

The 2SK444 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SPA package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 2SK444 MOSFET

Followings are the key electrical characteristics of the 2SK444 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 2SK444 MOSFET transistor is 15V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 2SK444 MOSFET transistor is 2V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 2SK444 MOSFET transistor is 0.05A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 2SK444 MOSFET transistor when the transistor is fully turned on is 50 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 2SK444 MOSFET transistor can comfortably transfer into heat without breaking is 0.2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 2SK444 MOSFET transistor is switched on is . This is the rate at which 2SK444 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 2SK444 MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 2SK444 MOSFET transistor can be safely operated at the 125°C without damaging the transistor.

UXPython is not the creator or an official representative of the 2SK444 MOSFET transistor. You can download the official 2SK444 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel MOSFET

2SK1578 2SK1578 MOSFET Transistor 2SK1841 2SK1841 MOSFET Transistor 2SK2074 2SK2074 MOSFET Transistor 2SK212 2SK212 MOSFET Transistor 2SK2395 2SK2395 MOSFET Transistor 2SK304 2SK304 MOSFET Transistor 2SK315 2SK315 MOSFET Transistor 2SK404 2SK404 MOSFET Transistor 2SK427 2SK427 MOSFET Transistor 2SK544 2SK544 MOSFET Transistor 2SK546 2SK546 MOSFET Transistor 2SK669 2SK669 MOSFET Transistor 2SK715 2SK715 MOSFET Transistor 2SK772 2SK772 MOSFET Transistor 5LP01SP 5LP01SP MOSFET Transistor 5LN01SP 5LN01SP MOSFET Transistor