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1N60P MOSFET Transistor

The 1N60P is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the 1N60P transistor as follows.

Circuit diagram symbol of the 1N60P transistor

1N60P Transistor Specification

Transistor Code 1N60P
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-92
Drain-Source Voltage (Maximum) VDS 600V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 1.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 9.3Ohm
Power Dissipation (Maximum) PD 1W
Drain-Source Capacitance 20pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 25nS

1N60P MOSFET Transistor Overview

The 1N60P is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-92 package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the 1N60P MOSFET

Followings are the key electrical characteristics of the 1N60P MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in 1N60P MOSFET transistor is 600V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the 1N60P MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the 1N60P MOSFET transistor is 1.2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of 1N60P MOSFET transistor when the transistor is fully turned on is 9.3 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the 1N60P MOSFET transistor can comfortably transfer into heat without breaking is 1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the 1N60P MOSFET transistor is 20pF. This value influences to the switching speed of the 1N60P MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the 1N60P MOSFET transistor is switched on is 25nS. This is the rate at which 1N60P MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the 1N60P MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of 1N60P MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the 1N60P MOSFET transistor. You can download the official 1N60P MOSFET transistor datasheet to get more infromation about this transistor.

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