PBSS5130PAP PNP Transistor

The PBSS5130PAP is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the PBSS5130PAP transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS5130PAP transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the PBSS5130PAP transistor as follows.

PBSS5130PAP Transistor Specification

Transistor Code		PBSS5130PAP
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-1118
Transistor SMD Code		2E
Collector Power Dissipation (Maximum)	PC	1.45W
Collector-Base Voltage (Maximum)	VCB	30V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		120
Transition Frequency	FT	65MHz
Collector Capacitance	CC	13pF

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