PBSS4260PAN NPN Transistor

The PBSS4260PAN is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the PBSS4260PAN transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The PBSS4260PAN transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the PBSS4260PAN transistor as follows.

PBSS4260PAN Transistor Specification

Transistor Code		PBSS4260PAN
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-1118
Transistor SMD Code		2N
Collector Power Dissipation (Maximum)	PC	1.45W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	60V
Collector Current (Maximum)	IC	2A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	7V
Forward Current Transfer Ratio (hFE Value)		50
Transition Frequency	FT	70MHz
Collector Capacitance	CC	6.5pF

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