NSVBCW32LT1G NPN Transistor

The NSVBCW32LT1G is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the NSVBCW32LT1G transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The NSVBCW32LT1G transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the NSVBCW32LT1G transistor as follows.

NSVBCW32LT1G Transistor Specification

Transistor Code		NSVBCW32LT1G
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		D2
Collector Power Dissipation (Maximum)	PC	0.23W
Collector-Base Voltage (Maximum)	VCB	32V
Collector-Emitter Voltage (Maximum)	VCE	32V
Collector Current (Maximum)	IC	0.1A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	5V
Forward Current Transfer Ratio (hFE Value)		200
Collector Capacitance	CC	4pF

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