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MMBT5551LT1 NPN Transistor

The MMBT5551LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBT5551LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBT5551LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBT5551LT1 transistor as follows.

Circuit diagram symbol of the MMBT5551LT1 transistor

MMBT5551LT1 Transistor Specification

Transistor Code MMBT5551LT1
Transistor Type BJT
Transistor Polarity NPN
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code G1
Collector Power Dissipation (Maximum) PC 0.2W
Collector-Base Voltage (Maximum) VCB 180V
Collector-Emitter Voltage (Maximum) VCE 160V
Collector Current (Maximum) IC 0.6A
Operating Junction Temperature (Maximum) TJ 175°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 80
Transition Frequency FT 100MHz
Collector Capacitance CC 10pF

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