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12A02MH-TL-E PNP Transistor

The 12A02MH-TL-E is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 12A02MH-TL-E transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 12A02MH-TL-E transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 12A02MH-TL-E transistor as follows.

Circuit diagram symbol of the 12A02MH-TL-E transistor

12A02MH-TL-E Transistor Specification

Transistor Code 12A02MH-TL-E
Transistor Type BJT
Transistor Polarity PNP
Transistor Material Silicon(SI)
Package SOT323
Transistor SMD Code AK
Collector Power Dissipation (Maximum) PC 0.6W
Collector-Base Voltage (Maximum) VCB 15V
Collector-Emitter Voltage (Maximum) VCE 12V
Collector Current (Maximum) IC 1A
Operating Junction Temperature (Maximum) TJ 150°C
Emitter-Base Voltage (Maximum) VEB 5V
Forward Current Transfer Ratio (hFE Value) 300
Transition Frequency FT 450MHz
Collector Capacitance CC 6pF

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