2SA812RLT1 PNP Transistor

The 2SA812RLT1 is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the 2SA812RLT1 transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The 2SA812RLT1 transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the 2SA812RLT1 transistor as follows.

2SA812RLT1 Transistor Specification

Transistor Code		2SA812RLT1
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.2W
Collector-Base Voltage (Maximum)	VCB	60V
Collector-Emitter Voltage (Maximum)	VCE	50V
Collector Current (Maximum)	IC	0.15A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		180
Transition Frequency	FT	180MHz
Collector Capacitance	CC	4.5pF

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