MMBR911LT1 NPN Transistor

The MMBR911LT1 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the MMBR911LT1 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The MMBR911LT1 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the MMBR911LT1 transistor as follows.

MMBR911LT1 Transistor Specification

Transistor Code		MMBR911LT1
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		7P
Collector Power Dissipation (Maximum)	PC	0.625W
Collector-Base Voltage (Maximum)	VCB	20V
Collector-Emitter Voltage (Maximum)	VCE	12V
Collector Current (Maximum)	IC	0.06A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	2V
Forward Current Transfer Ratio (hFE Value)		30
Transition Frequency	FT	7000MHz
Collector Capacitance	CC	1pF

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