HMBT5551 NPN Transistor

The HMBT5551 is a bipolar junction transistor (BJT) with an NPN-type configuration. That means the HMBT5551 transistor has a positively charged layer between two negatively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The HMBT5551 transistor symbol shows an arrow from the base into the emitter. This means that the current flows from collector terminal to emitter terminal.

Circuit diagram symbol of the HMBT5551 transistor as follows.

HMBT5551 Transistor Specification

Transistor Code		HMBT5551
Transistor Type		BJT
Transistor Polarity		NPN
Transistor Material		Silicon(SI)
Package		SOT-23
Collector Power Dissipation (Maximum)	PC	0.225W
Collector-Base Voltage (Maximum)	VCB	180V
Collector-Emitter Voltage (Maximum)	VCE	160V
Collector Current (Maximum)	IC	0.6A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	6V
Forward Current Transfer Ratio (hFE Value)		80
Transition Frequency	FT	100MHz
Collector Capacitance	CC	6pF

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