BF660W PNP Transistor

The BF660W is a bipolar junction transistor (BJT) with an PNP-type configuration. That means the BF660W transistor has a negatively charged layer between two positively charged layers. This transistor has three terminals Base, Collector, and Emitter.

The BF660W transistor symbol shows an arrow from the emitter into the base. This means that the current flows from emitter to collector terminal.

Circuit diagram symbol of the BF660W transistor as follows.

BF660W Transistor Specification

Transistor Code		BF660W
Transistor Type		BJT
Transistor Polarity		PNP
Transistor Material		Silicon(SI)
Package		SOT23
Transistor SMD Code		LE_LEs
Collector Power Dissipation (Maximum)	PC	0.11W
Collector-Base Voltage (Maximum)	VCB	40V
Collector-Emitter Voltage (Maximum)	VCE	30V
Collector Current (Maximum)	IC	0.025A
Operating Junction Temperature (Maximum)	TJ	150°C
Emitter-Base Voltage (Maximum)	VEB	4V
Forward Current Transfer Ratio (hFE Value)		60
Transition Frequency	FT	400MHz
Collector Capacitance	CC	0.6pF

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