SME6G10US120 IGBT Transistor

The SME6G10US120 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the SME6G10US120 transistor as follows.

SME6G10US120 Transistor Specification

Transistor Code		SME6G10US120
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		17PM-BA
Collector-Emitter Voltage (Maximum)	VCE	1200V
Collector-Emitter Saturation Voltage	VCE(on)	2.4V
Collector Current (Maximum)	IC	10A
Operating Junction Temperature (Maximum)		150 oC
Rise Time		150

UXPython is not the creator or an official representative of the SME6G10US120 IGBT transistor. You can download the official SME6G10US120 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

1MBH05D-120 IGBT Transistor IXGH10N100AU1 IGBT Transistor SKM150GB063D IGBT Transistor VS-GA100NA60UP IGBT Transistor NGTB30N120L2 IGBT Transistor SKM100GD063DL IGBT Transistor APTGT300U170D4 IGBT Transistor SKM75GAL123D IGBT Transistor MMG300Q060B6N IGBT Transistor CT30VM-8 IGBT Transistor IRGB4620D IGBT Transistor MMG40A120B7HN IGBT Transistor NGTB20N120IHRWG IGBT Transistor AP30G120ASW IGBT Transistor MMG75SR120DE IGBT Transistor IXST45N120B IGBT Transistor IRG4PC50U IGBT Transistor IXSH40N60B2D1 IGBT Transistor VS-GB100LH120N IGBT Transistor IXGH50N60A IGBT Transistor