RJP30E2DPP-M0 IGBT Transistor

The RJP30E2DPP-M0 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the RJP30E2DPP-M0 transistor as follows.

RJP30E2DPP-M0 Transistor Specification

Transistor Code		RJP30E2DPP-M0
Transistor Type		IGBT
IGBT Control Channel Type		N-Channel
Package		TO220FL
Collector-Emitter Voltage (Maximum)	VCE	360V
Collector-Emitter Saturation Voltage	VCE(on)	1.7V
Collector Current (Maximum)	IC	35A
Rise Time		150

UXPython is not the creator or an official representative of the RJP30E2DPP-M0 IGBT transistor. You can download the official RJP30E2DPP-M0 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

IRG6IC30U IGBT Transistor VS-GB75LA60UF IGBT Transistor KGT25N120NDA IGBT Transistor 50MT060ULSTAPBF IGBT Transistor IRGPS40B120UD IGBT Transistor APTGF150DA120T IGBT Transistor IRG7PA19U IGBT Transistor IXGR120N60B IGBT Transistor STGW40M120DF3 IGBT Transistor FGW50N60H(50G60H) IGBT Transistor SKM200GD062DK IGBT Transistor IXGH32N170A IGBT Transistor MMG100SR120UK IGBT Transistor AP20G45EH IGBT Transistor IXGH32N60C IGBT Transistor MUBW50-12A8 IGBT Transistor TGAN30N120FD IGBT Transistor IXXH50N60C3 IGBT Transistor IRG4PC20U IGBT Transistor HGTD3N60B3S IGBT Transistor