free stats

FB30R06W1E3 IGBT Transistor

The FB30R06W1E3 is a N-Channel insulated-gate bipolar transistor (IGBT). This transistor has a three-terminal device with Gate (G), Collector (C) and Emitter (E) terminals.

Circuit diagram symbol of the FB30R06W1E3 transistor as follows.

Circuit diagram symbol of the FB30R06W1E3 transistor

FB30R06W1E3 Transistor Specification

Transistor Code FB30R06W1E3
Transistor Type IGBT
IGBT Control Channel Type N-Channel
Package MODULE
Collector Power Dissipation (Maximum) Pc 115W
Collector-Emitter Voltage (Maximum) VCE 600V
Gate-Emitter Voltage (Maximum) VGE 20V
Collector-Emitter Saturation Voltage VCE(on) 1.55V
Collector Current (Maximum) IC 30A
Operating Junction Temperature (Maximum) 150 oC
Rise Time 16

UXPython is not the creator or an official representative of the FB30R06W1E3 IGBT transistor. You can download the official FB30R06W1E3 IGBT transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

More Transistors Datasheets in N-Channel IGBT

KP810A KP810A IGBT Transistor IXBH32N300 IXBH32N300 IGBT Transistor CI40T120P CI40T120P IGBT Transistor MSAGX75L60A MSAGX75L60A IGBT Transistor STGF10NC60SD STGF10NC60SD IGBT Transistor G10N40C1 G10N40C1 IGBT Transistor GT8G121 GT8G121 IGBT Transistor IKA08N65H5 IKA08N65H5 IGBT Transistor IRG4BC20K-S IRG4BC20K-S IGBT Transistor STGP30NC60S STGP30NC60S IGBT Transistor RJP60D0DPK RJP60D0DPK IGBT Transistor HGT1S5N120BNDS HGT1S5N120BNDS IGBT Transistor APTGT75A170D1 APTGT75A170D1 IGBT Transistor IXBH40N160 IXBH40N160 IGBT Transistor IRG4PH20K IRG4PH20K IGBT Transistor RJP63F3DPP-M0 RJP63F3DPP-M0 IGBT Transistor IRG4BC40F IRG4BC40F IGBT Transistor IXYH30N450HV IXYH30N450HV IGBT Transistor IGC54T65T8RM IGC54T65T8RM IGBT Transistor IQIB100N60A3 IQIB100N60A3 IGBT Transistor