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ZXMN6A11G MOSFET Transistor

The ZXMN6A11G is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the ZXMN6A11G transistor as follows.

Circuit diagram symbol of the ZXMN6A11G transistor

ZXMN6A11G Transistor Specification

Transistor Code ZXMN6A11G
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT223
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 4.4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.18Ohm
Power Dissipation (Maximum) PD 3.9W
Drain-Source Capacitance 330pF

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