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WPM4801 MOSFET Transistor

The WPM4801 is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WPM4801 transistor as follows.

Circuit diagram symbol of the WPM4801 transistor

WPM4801 Transistor Specification

Transistor Code WPM4801
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOP8P
Transistor SMD Code WPM4801
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 12V
Drain Current (Maximum) ID 5.6A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.06Ohm
Power Dissipation (Maximum) PD 2W

WPM4801 MOSFET Transistor Overview

The WPM4801 is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOP8P package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the WPM4801 MOSFET

Followings are the key electrical characteristics of the WPM4801 MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)
  • The maximum drain-source voltage that can safely block between drain and source in WPM4801 MOSFET transistor is 30V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)
  • The maximum safe voltage that can be used between the gate and source of the WPM4801 MOSFET transistor is 12V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)
  • The maximum continuous current flowing between the drain and source of the WPM4801 MOSFET transistor is 5.6A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))
  • The internal resistance between the drain and source of WPM4801 MOSFET transistor when the transistor is fully turned on is 0.06 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)
  • The maximum power that the WPM4801 MOSFET transistor can comfortably transfer into heat without breaking is 2W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time
  • The time that the drain current or output voltage increases between low to high when the WPM4801 MOSFET transistor is switched on is . This is the rate at which WPM4801 MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the WPM4801 MOSFET transistor. You can download the official WPM4801 MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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