WFF8N65B MOSFET Transistor

The WFF8N65B is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the WFF8N65B transistor as follows.

WFF8N65B Transistor Specification

Transistor Code		WFF8N65B
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		TO-220F
Drain-Source Voltage (Maximum)	VDS	650V
Gate-Source Voltage (Maximum)	VGS	30V
Drain Current (Maximum)	ID	7.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	1.3Ohm
Power Dissipation (Maximum)	PD	48W
Drain-Source Capacitance		115pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		80nS
Gate-Threshold Voltage (Maximum)		4V
Total Gate Charge		25nC

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