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STP6635GH MOSFET Transistor

The STP6635GH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the STP6635GH transistor as follows.

Circuit diagram symbol of the STP6635GH transistor

STP6635GH Transistor Specification

Transistor Code STP6635GH
Transistor Type MOSFET
Control Channel Type P-Channel
Package TO-251_TO-252
Drain-Source Voltage (Maximum) VDS 30V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 40A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.02Ohm
Power Dissipation (Maximum) PD 44W
Drain-Source Capacitance 169pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 65nS
Gate-Threshold Voltage (Maximum) 3V
Total Gate Charge 16.5nC

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