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SSM3K7002BFS MOSFET Transistor

The SSM3K7002BFS is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSM3K7002BFS transistor as follows.

Circuit diagram symbol of the SSM3K7002BFS transistor

SSM3K7002BFS Transistor Specification

Transistor Code SSM3K7002BFS
Transistor Type MOSFET
Control Channel Type N-Channel
Package SOT416_SC75_SSM
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 0.2A
Drain-Source On-State Resistance (Maximum) RDS(on) 2.1Ohm
Power Dissipation (Maximum) PD 0.1W

SSM3K7002BFS MOSFET Transistor Overview

The SSM3K7002BFS is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a SOT416_SC75_SSM package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SSM3K7002BFS MOSFET

Followings are the key electrical characteristics of the SSM3K7002BFS MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SSM3K7002BFS MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SSM3K7002BFS MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SSM3K7002BFS MOSFET transistor is 0.2A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SSM3K7002BFS MOSFET transistor when the transistor is fully turned on is 2.1 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SSM3K7002BFS MOSFET transistor can comfortably transfer into heat without breaking is 0.1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SSM3K7002BFS MOSFET transistor is switched on is . This is the rate at which SSM3K7002BFS MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

UXPython is not the creator or an official representative of the SSM3K7002BFS MOSFET transistor. You can download the official SSM3K7002BFS MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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