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SSH25N40A MOSFET Transistor

The SSH25N40A is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SSH25N40A transistor as follows.

Circuit diagram symbol of the SSH25N40A transistor

SSH25N40A Transistor Specification

Transistor Code SSH25N40A
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO3P
Drain-Source Voltage (Maximum) VDS 400V
Drain Current (Maximum) ID 25A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.2Ohm
Power Dissipation (Maximum) PD 278W
Drain-Source Capacitance 3180pF
Operating Junction Temperature (Maximum) 150°C
Total Gate Charge 140nC

SSH25N40A MOSFET Transistor Overview

The SSH25N40A is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO3P package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SSH25N40A MOSFET

Followings are the key electrical characteristics of the SSH25N40A MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SSH25N40A MOSFET transistor is 400V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SSH25N40A MOSFET transistor is 25A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SSH25N40A MOSFET transistor when the transistor is fully turned on is 0.2 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SSH25N40A MOSFET transistor can comfortably transfer into heat without breaking is 278W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SSH25N40A MOSFET transistor is 3180pF. This value influences to the switching speed of the SSH25N40A MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SSH25N40A MOSFET transistor is switched on is . This is the rate at which SSH25N40A MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SSH25N40A MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SSH25N40A MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SSH25N40A MOSFET transistor. You can download the official SSH25N40A MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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