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SRC4N65TC MOSFET Transistor

The SRC4N65TC is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SRC4N65TC transistor as follows.

Circuit diagram symbol of the SRC4N65TC transistor

SRC4N65TC Transistor Specification

Transistor Code SRC4N65TC
Transistor Type MOSFET
Control Channel Type N-Channel
Package TO-220C
Drain-Source Voltage (Maximum) VDS 700V
Gate-Source Voltage (Maximum) VGS 30V
Drain Current (Maximum) ID 4A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.935Ohm
Power Dissipation (Maximum) PD 78W
Drain-Source Capacitance 298pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 11.8nS
Gate-Threshold Voltage (Maximum) 4.49V
Total Gate Charge 13.2nC

SRC4N65TC MOSFET Transistor Overview

The SRC4N65TC is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a TO-220C package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SRC4N65TC MOSFET

Followings are the key electrical characteristics of the SRC4N65TC MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SRC4N65TC MOSFET transistor is 700V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SRC4N65TC MOSFET transistor is 30V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SRC4N65TC MOSFET transistor is 4A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SRC4N65TC MOSFET transistor when the transistor is fully turned on is 0.935 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SRC4N65TC MOSFET transistor can comfortably transfer into heat without breaking is 78W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SRC4N65TC MOSFET transistor is 298pF. This value influences to the switching speed of the SRC4N65TC MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SRC4N65TC MOSFET transistor is switched on is 11.8nS. This is the rate at which SRC4N65TC MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SRC4N65TC MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SRC4N65TC MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SRC4N65TC MOSFET transistor. You can download the official SRC4N65TC MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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