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SQS466EEN MOSFET Transistor

The SQS466EEN is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SQS466EEN transistor as follows.

Circuit diagram symbol of the SQS466EEN transistor

SQS466EEN Transistor Specification

Transistor Code SQS466EEN
Transistor Type MOSFET
Control Channel Type N-Channel
Package POWERPAK1212-8
Transistor SMD Code Q009
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 8A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.048Ohm
Power Dissipation (Maximum) PD 33W
Drain-Source Capacitance 85pF
Operating Junction Temperature (Maximum) 175°C
Rise Time 10nS
Gate-Threshold Voltage (Maximum) 2.5V
Total Gate Charge 14nC

SQS466EEN MOSFET Transistor Overview

The SQS466EEN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a POWERPAK1212-8 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the SQS466EEN MOSFET

Followings are the key electrical characteristics of the SQS466EEN MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SQS466EEN MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SQS466EEN MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SQS466EEN MOSFET transistor is 8A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SQS466EEN MOSFET transistor when the transistor is fully turned on is 0.048 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SQS466EEN MOSFET transistor can comfortably transfer into heat without breaking is 33W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SQS466EEN MOSFET transistor is 85pF. This value influences to the switching speed of the SQS466EEN MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SQS466EEN MOSFET transistor is switched on is 10nS. This is the rate at which SQS466EEN MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SQS466EEN MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SQS466EEN MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the SQS466EEN MOSFET transistor. You can download the official SQS466EEN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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