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SPP15P10PH MOSFET Transistor

The SPP15P10PH is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SPP15P10PH transistor as follows.

SPP15P10PH Transistor Specification

Transistor Code		SPP15P10PH
Transistor Type		MOSFET
Control Channel Type		P-Channel
Package		PG-TO220-3
Transistor SMD Code		15P10P
Drain-Source Voltage (Maximum)	V_DS	100V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	15A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.24Ohm
Power Dissipation (Maximum)	P_D	128W
Drain-Source Capacitance		237pF
Operating Junction Temperature (Maximum)		175°C
Rise Time		23nS
Gate-Threshold Voltage (Maximum)		2.1V
Total Gate Charge		37nC

SPP15P10PH MOSFET Transistor Overview

The SPP15P10PH is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a PG-TO220-3 package, making it suitable for projects that require high power handling and reliable switching performance.

Key Electrical Characteristics of the SPP15P10PH MOSFET

Followings are the key electrical characteristics of the SPP15P10PH MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SPP15P10PH MOSFET transistor is 100V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the SPP15P10PH MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SPP15P10PH MOSFET transistor is 15A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SPP15P10PH MOSFET transistor when the transistor is fully turned on is 0.24 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the SPP15P10PH MOSFET transistor can comfortably transfer into heat without breaking is 128W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the SPP15P10PH MOSFET transistor is 237pF. This value influences to the switching speed of the SPP15P10PH MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the SPP15P10PH MOSFET transistor is switched on is 23nS. This is the rate at which SPP15P10PH MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SPP15P10PH MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SPP15P10PH MOSFET transistor can be safely operated at the 175°C without damaging the transistor.

UXPython is not the creator or an official representative of the SPP15P10PH MOSFET transistor. You can download the official SPP15P10PH MOSFET transistor datasheet to get more infromation about this transistor.

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