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SM6002NSKP MOSFET Transistor

The SM6002NSKP is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM6002NSKP transistor as follows.

Circuit diagram symbol of the SM6002NSKP transistor

SM6002NSKP Transistor Specification

Transistor Code SM6002NSKP
Transistor Type MOSFET
Control Channel Type N-Channel
Package DFN5X6-8
Drain-Source Voltage (Maximum) VDS 60V
Gate-Source Voltage (Maximum) VGS 25V
Drain Current (Maximum) ID 60A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.008Ohm
Power Dissipation (Maximum) PD 50W
Drain-Source Capacitance 430pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 15nS
Gate-Threshold Voltage (Maximum) 4V
Total Gate Charge 76nC

SM6002NSKP MOSFET Transistor Overview

The SM6002NSKP is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DFN5X6-8 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the SM6002NSKP MOSFET

Followings are the key electrical characteristics of the SM6002NSKP MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SM6002NSKP MOSFET transistor is 60V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SM6002NSKP MOSFET transistor is 25V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SM6002NSKP MOSFET transistor is 60A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SM6002NSKP MOSFET transistor when the transistor is fully turned on is 0.008 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SM6002NSKP MOSFET transistor can comfortably transfer into heat without breaking is 50W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SM6002NSKP MOSFET transistor is 430pF. This value influences to the switching speed of the SM6002NSKP MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SM6002NSKP MOSFET transistor is switched on is 15nS. This is the rate at which SM6002NSKP MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SM6002NSKP MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SM6002NSKP MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SM6002NSKP MOSFET transistor. You can download the official SM6002NSKP MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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