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SM3433NHQG MOSFET Transistor

The SM3433NHQG is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM3433NHQG transistor as follows.

SM3433NHQG Transistor Specification

Transistor Code		SM3433NHQG
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3.3X3.3B-8
Transistor SMD Code		SM3433N
Drain-Source Voltage (Maximum)	V_DS	40V
Gate-Source Voltage (Maximum)	V_GS	20V
Drain Current (Maximum)	I_D	50A
Drain-Source On-State Resistance (Maximum)	R_DS(on)	0.0026Ohm
Power Dissipation (Maximum)	P_D	62.5W
Drain-Source Capacitance		790pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		9.3nS

SM3433NHQG MOSFET Transistor Overview

The SM3433NHQG is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a N-Channel MOSFET, which means it conducts when a positive voltage is applied to the gate with respect to the source.

This device comes in a DFN3.3X3.3B-8 package, making it suitable for projects that require moderate power handling and reliable switching performance.

Key Electrical Characteristics of the SM3433NHQG MOSFET

Followings are the key electrical characteristics of the SM3433NHQG MOSFET transistor

Maximum Drain-Source Voltage (V_DS)

The maximum drain-source voltage that can safely block between drain and source in SM3433NHQG MOSFET transistor is 40V.

This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

Maximum Gate-Source Voltage (V_GS)

The maximum safe voltage that can be used between the gate and source of the SM3433NHQG MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

Maximum Drain Current (I_D)

The maximum continuous current flowing between the drain and source of the SM3433NHQG MOSFET transistor is 50A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

Drain-Source On-State Resistance (R_DS(on))

The internal resistance between the drain and source of SM3433NHQG MOSFET transistor when the transistor is fully turned on is 0.0026 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

Maximum Power Dissipation (P_D)

The maximum power that the SM3433NHQG MOSFET transistor can comfortably transfer into heat without breaking is 62.5W. This indicates the amount of power that can safely be dissipated to the device as heat.

Drain-Source Capacitance

The capacitance between drain and source of the SM3433NHQG MOSFET transistor is 790pF. This value influences to the switching speed of the SM3433NHQG MOSFET transistor and the high-frequency performance.

This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

Rise Time

The time that the drain current or output voltage increases between low to high when the SM3433NHQG MOSFET transistor is switched on is 9.3nS. This is the rate at which SM3433NHQG MOSFET transistor switches on.

This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SM3433NHQG MOSFET

Maximum Operating Junction Temperature

The maximum internal temperature of the semiconductor junction of SM3433NHQG MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SM3433NHQG MOSFET transistor. You can download the official SM3433NHQG MOSFET transistor datasheet to get more infromation about this transistor.

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