SM3326NHQA MOSFET Transistor

The SM3326NHQA is a N-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM3326NHQA transistor as follows.

SM3326NHQA Transistor Specification

Transistor Code		SM3326NHQA
Transistor Type		MOSFET
Control Channel Type		N-Channel
Package		DFN3X3A-8
Drain-Source Voltage (Maximum)	VDS	30V
Gate-Source Voltage (Maximum)	VGS	20V
Drain Current (Maximum)	ID	27.5A
Drain-Source On-State Resistance (Maximum)	RDS(on)	0.009Ohm
Power Dissipation (Maximum)	PD	22.7W
Drain-Source Capacitance		318pF
Operating Junction Temperature (Maximum)		150°C
Rise Time		10nS

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