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SM2319PSAN MOSFET Transistor

The SM2319PSAN is a P-Channel metal-oxide semiconductor field-effect transistor (MOSFET) is the most common type of field-effect transistor (FET). This transistor has a three-terminal device with Gate (G), Drain (D) and Source (S) terminals.

Circuit diagram symbol of the SM2319PSAN transistor as follows.

Circuit diagram symbol of the SM2319PSAN transistor

SM2319PSAN Transistor Specification

Transistor Code SM2319PSAN
Transistor Type MOSFET
Control Channel Type P-Channel
Package SOT23N
Transistor SMD Code B19*
Drain-Source Voltage (Maximum) VDS 40V
Gate-Source Voltage (Maximum) VGS 20V
Drain Current (Maximum) ID 3A
Drain-Source On-State Resistance (Maximum) RDS(on) 0.08Ohm
Power Dissipation (Maximum) PD 1.1W
Drain-Source Capacitance 58pF
Operating Junction Temperature (Maximum) 150°C
Rise Time 6nS

SM2319PSAN MOSFET Transistor Overview

The SM2319PSAN is a transistor, a MOSFET, used for on and off switching in electrical gadgets and power control applications. It is a P-Channel MOSFET, which means it conducts when a negative voltage is applied to the gate with respect to the source.

This device comes in a SOT23N package, making it suitable for projects that require low power handling and reliable switching performance.

Key Electrical Characteristics of the SM2319PSAN MOSFET

Followings are the key electrical characteristics of the SM2319PSAN MOSFET transistor

  • Maximum Drain-Source Voltage (VDS)

    • The maximum drain-source voltage that can safely block between drain and source in SM2319PSAN MOSFET transistor is 40V.

    This is the highest voltage the MOSFET transistor can safely block between the drain and source without damadging to the transistor.

  • Maximum Gate-Source Voltage (VGS)

    • The maximum safe voltage that can be used between the gate and source of the SM2319PSAN MOSFET transistor is 20V without any harm. This limit should not be exceeded to prevent damage from the gate voltage.

  • Maximum Drain Current (ID)

    • The maximum continuous current flowing between the drain and source of the SM2319PSAN MOSFET transistor is 3A. This is the highest current that can safely flow between drain and source without damaging the MOSFET transistor.

  • Drain-Source On-State Resistance (RDS(on))

    • The internal resistance between the drain and source of SM2319PSAN MOSFET transistor when the transistor is fully turned on is 0.08 Ohm that defines the amount of lost power that is wasted as heat when the transistor is operating.

  • Maximum Power Dissipation (PD)

    • The maximum power that the SM2319PSAN MOSFET transistor can comfortably transfer into heat without breaking is 1.1W. This indicates the amount of power that can safely be dissipated to the device as heat.

  • Drain-Source Capacitance

    • The capacitance between drain and source of the SM2319PSAN MOSFET transistor is 58pF. This value influences to the switching speed of the SM2319PSAN MOSFET transistor and the high-frequency performance.

    This is the ability to hold a small electric charge between the drain and source of a MOSFET transistor, like a tiny built-in capacitor.

  • Rise Time

    • The time that the drain current or output voltage increases between low to high when the SM2319PSAN MOSFET transistor is switched on is 6nS. This is the rate at which SM2319PSAN MOSFET transistor switches on.

    This shows how fast the MOSFET transistor switched on.

Thermal Performance of the SM2319PSAN MOSFET

  • Maximum Operating Junction Temperature

    • The maximum internal temperature of the semiconductor junction of SM2319PSAN MOSFET transistor can be safely operated at the 150°C without damaging the transistor.

UXPython is not the creator or an official representative of the SM2319PSAN MOSFET transistor. You can download the official SM2319PSAN MOSFET transistor datasheet to get more infromation about this transistor.

Note : Copyrighted materials belong to their creator or official representative.

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